dopant density

The results show that with the increase of the boron dopant density, the potential windows of the electrodes become narrower and the background currents become larger.

结果表明，随着掺硼浓度的增加，电极的电势窗口略微变小，背景电流也随之变大。

For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.

快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。